InP Concentrator Solar Cells

J. S. Ward, M. W. Wanlass, T. J. Coutts, K. A. Emery, C. R. Osterwald

Research output: Contribution to conferencePaperpeer-review

24 Scopus Citations

Abstract

The design, fabrication, and characterization of high-performance, n+/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4% AM0 (24.3% direct) at 25°C have been fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.

Original languageAmerican English
Pages365-370
Number of pages6
DOIs
StatePublished - 1992
Externally publishedYes
EventThe Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA
Duration: 7 Oct 199111 Oct 1991

Conference

ConferenceThe Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
CityLas Vegas, NV, USA
Period7/10/9111/10/91

NREL Publication Number

  • SERI/CP-213-4523

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