Abstract
The design, fabrication, and characterization of high-performance, n+/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4% AM0 (24.3% direct) at 25°C have been fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.
Original language | American English |
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Pages | 365-370 |
Number of pages | 6 |
DOIs | |
State | Published - 1992 |
Event | The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA Duration: 7 Oct 1991 → 11 Oct 1991 |
Conference
Conference | The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 |
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City | Las Vegas, NV, USA |
Period | 7/10/91 → 11/10/91 |
NREL Publication Number
- SERI/CP-213-4523