InP Concentrator Solar Cells

J. S. Ward; M. W. Wanlass; T. J. Coutts; K. A. Emery; C. R. Osterwald

doi:10.1109/PVSC.1991.169240

InP Concentrator Solar Cells

J. S. Ward, M. W. Wanlass, T. J. Coutts, K. A. Emery, C. R. Osterwald

Chemistry and Nanoscience

Unknown

Research output: Contribution to conference › Paper › peer-review

24 Scopus Citations

Abstract

The design, fabrication, and characterization of high-performance, n⁺/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4% AM0 (24.3% direct) at 25°C have been fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.

Original language	American English
Pages	365-370
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.1991.169240
State	Published - 1992
Event	The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA Duration: 7 Oct 1991 → 11 Oct 1991

Conference

Conference	The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
City	Las Vegas, NV, USA
Period	7/10/91 → 11/10/91

NREL Publication Number

SERI/CP-213-4523

Access to Document

10.1109/PVSC.1991.169240

Cite this

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title = "InP Concentrator Solar Cells",

abstract = "The design, fabrication, and characterization of high-performance, n+/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4% AM0 (24.3% direct) at 25°C have been fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.",

author = "Ward, {J. S.} and Wanlass, {M. W.} and Coutts, {T. J.} and Emery, {K. A.} and Osterwald, {C. R.}",

year = "1992",

doi = "10.1109/PVSC.1991.169240",

language = "American English",

pages = "365--370",

note = "The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 ; Conference date: 07-10-1991 Through 11-10-1991",

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TY - CONF

T1 - InP Concentrator Solar Cells

AU - Ward, J. S.

AU - Wanlass, M. W.

AU - Coutts, T. J.

AU - Emery, K. A.

AU - Osterwald, C. R.

PY - 1992

Y1 - 1992

N2 - The design, fabrication, and characterization of high-performance, n+/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4% AM0 (24.3% direct) at 25°C have been fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.

AB - The design, fabrication, and characterization of high-performance, n+/p InP shallow-homojunction (SHJ) concentrator solar cells are described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of around 100, cells with efficiencies of 21.4% AM0 (24.3% direct) at 25°C have been fabricated. These are the highest efficiencies yet reported for single-junction InP solar cells. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined. Application of these results to other InP-based photovoltaic devices is discussed.

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U2 - 10.1109/PVSC.1991.169240

DO - 10.1109/PVSC.1991.169240

M3 - Paper

AN - SCOPUS:0026746874

SP - 365

EP - 370

T2 - The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991

Y2 - 7 October 1991 through 11 October 1991

ER -

InP Concentrator Solar Cells

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