Insight into the Epitaxial Growth of High Optical Quality GaAs1-xBix

Daniel Beaton, Kirstin Alberi, Angelo Mascarenhas

Research output: Contribution to journalArticlepeer-review

17 Scopus Citations


The ternary alloy GaAs1-xBix is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs1-xBix epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., InyGa1-yAs. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. The improved optical quality now opens up possibilities for the practical use of GaAs1-xBix in optoelectronic devices.

Original languageAmerican English
Article numberArticle No. 235701
Number of pages8
JournalJournal of Applied Physics
Issue number23
StatePublished - 21 Dec 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5K00-64989


  • bismuth
  • desorption
  • III-V semiconductors
  • photoluminescence
  • surfactants


Dive into the research topics of 'Insight into the Epitaxial Growth of High Optical Quality GaAs1-xBix'. Together they form a unique fingerprint.

Cite this