Intensity Dependent Minority-Carrier Lifetime in III-V Semiconductors Due to Saturation of Recombination Centers

R. K. Ahrenkiel; B. M. Keyes; D. J. Dunlavy

doi:10.1063/1.350315

Intensity Dependent Minority-Carrier Lifetime in III-V Semiconductors Due to Saturation of Recombination Centers

R. K. Ahrenkiel, B. M. Keyes, D. J. Dunlavy

National Renewable Energy Laboratory

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Abstract

The minority-carrier lifetime has been measured by time-resolved photoluminescence in a variety of III-V epitaxial material including GaAs and Al_xGa_1-xAs. In cases where Shockley-Read-Hall recombination is dominant, the measured lifetimes are dependent upon the intensity of the excitation source. These lifetime effects can be described by a Shockley-Read-Hall model that includes the injection dependence of the recombination. As the lifetimes increase with the injection level, we describe the effects as the saturation of recombination centers.

Original language	American English
Pages (from-to)	225-231
Number of pages	7
Journal	Journal of Applied Physics
Volume	70
Issue number	1
DOIs	https://doi.org/10.1063/1.350315 https://doi.org/10.1063/1.350315
State	Published - 1991

NREL Publication Number

ACNR/JA-213-12198

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abstract = "The minority-carrier lifetime has been measured by time-resolved photoluminescence in a variety of III-V epitaxial material including GaAs and AlxGa1-xAs. In cases where Shockley-Read-Hall recombination is dominant, the measured lifetimes are dependent upon the intensity of the excitation source. These lifetime effects can be described by a Shockley-Read-Hall model that includes the injection dependence of the recombination. As the lifetimes increase with the injection level, we describe the effects as the saturation of recombination centers.",

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AB - The minority-carrier lifetime has been measured by time-resolved photoluminescence in a variety of III-V epitaxial material including GaAs and AlxGa1-xAs. In cases where Shockley-Read-Hall recombination is dominant, the measured lifetimes are dependent upon the intensity of the excitation source. These lifetime effects can be described by a Shockley-Read-Hall model that includes the injection dependence of the recombination. As the lifetimes increase with the injection level, we describe the effects as the saturation of recombination centers.

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Intensity Dependent Minority-Carrier Lifetime in III-V Semiconductors Due to Saturation of Recombination Centers

Abstract

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