Abstract
Polycrystalline thin-film, tandem solar cells promise high efficiencies and high open-circuit voltages. Along with the high-bandgap top cell, a thin-film interconnect junction is one of the more demanding components of a monolithic tandem. We will present electrical, optical, structural, and device-compatibility results from several interconnect junctions grown on Cu(In,Ga)Se2, CdTe, and Si absorber layers. The physics of an interconnect junction will be discussed as a guide for choosing appropriate materials. Athough emphasis will be placed on several promising transparent p-type materials, results from degenerate n-type materials will also be discussed. Results of an n+/p+ interconnect junction in a monolithic tandem will be presented.
Original language | American English |
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Pages | 27-30 |
Number of pages | 4 |
State | Published - 2003 |
Event | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Conference
Conference | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
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Country/Territory | Japan |
City | Osaka |
Period | 11/05/03 → 18/05/03 |
NREL Publication Number
- NREL/CP-520-33085