Abstract
Polycrystalline thin-film, tandem solar cells promise high efficiencies and high open-circuit voltages. Along with the high-bandgap top cell, a thin-film interconnect junction is one of the more demanding components of a monolithic tandem. We will present electrical, optical, structural, and device-compatibility results from several interconnect junctions grown on Cu(In,Ga)Se2, CdTe, and Si absorber layers. The physics of an interconnect junction will be discussed as a guide for choosing appropriate materials. Athough emphasis will be placed on several promising transparent p-type materials, results from degenerate n-type materials will also be discussed. Results of an n+/p+ interconnect junction in a monolithic tandem will be presented.
| Original language | American English |
|---|---|
| Pages | 27-30 |
| Number of pages | 4 |
| State | Published - 2003 |
| Event | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003 |
Conference
| Conference | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Country/Territory | Japan |
| City | Osaka |
| Period | 11/05/03 → 18/05/03 |
NREL Publication Number
- NREL/CP-520-33085