Interdigitated Back Passivated Contact (IBPC) Solar Cells Formed by Ion Implantation

David L. Young, William Nemeth, Vincenzo Lasalvia, Robert Reedy, Stephanie Essig, Nicholas Bateman, Paul Stradins

Research output: Contribution to journalArticlepeer-review

36 Scopus Citations

Abstract

We describe work toward an interdigitated back passivated contact (IBPC) solar cell formed by patterned ion-implanted passivated contacts. Formation of electron and hole passivated contacts to n-type Cz wafers using a thin SiO2 layer and ion-implanted amorphous silicon (a-Si) is described. P and B were ion implanted into intrinsic a-Si films, forming symmetric and IBPC test structures. The recombination parameter J0, as measured by a Sinton lifetime tester after thermal annealing, was J0 ∼ 2.4 fA/cm2 for Si:P and J0 ∼ fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts was found to be 0.46 Ω·cm2 for the n-type contact and 0.04 Ω·cm2 for the p-type contact. The IBPC solar cell test structure gave 1-sun Voc values of 682 mV and pFF = 80%. The benefits of the ion-implanted IBPC cell structure are discussed.

Original languageAmerican English
Article number7299242
Pages (from-to)41-47
Number of pages7
JournalIEEE Journal of Photovoltaics
Volume6
Issue number1
DOIs
StatePublished - Jan 2016

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

  • NREL/JA-5J00-65163

Keywords

  • Ion implantation
  • passivated contacts
  • silicon solar cells

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