Abstract
We describe work toward an interdigitated back passivated contact (IBPC) solar cell formed by patterned ion-implanted passivated contacts. Formation of electron and hole passivated contacts to n-type Cz wafers using a thin SiO2 layer and ion-implanted amorphous silicon (a-Si) is described. P and B were ion implanted into intrinsic a-Si films, forming symmetric and IBPC test structures. The recombination parameter J0, as measured by a Sinton lifetime tester after thermal annealing, was J0 ∼ 2.4 fA/cm2 for Si:P and J0 ∼ fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts was found to be 0.46 Ω·cm2 for the n-type contact and 0.04 Ω·cm2 for the p-type contact. The IBPC solar cell test structure gave 1-sun Voc values of 682 mV and pFF = 80%. The benefits of the ion-implanted IBPC cell structure are discussed.
Original language | American English |
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Article number | 7299242 |
Pages (from-to) | 41-47 |
Number of pages | 7 |
Journal | IEEE Journal of Photovoltaics |
Volume | 6 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2016 |
Bibliographical note
Publisher Copyright:© 2011-2012 IEEE.
NREL Publication Number
- NREL/JA-5J00-65163
Keywords
- Ion implantation
- passivated contacts
- silicon solar cells