Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV

James Burst, Joel Duenow, Helio Moutinho, Chun Sheng Jiang, Mowafak Al-Jassim, Matthew Reese, David Albin, Eric Colegrove, Darius Kuciauskas, Teresa Barnes, Wyatt Metzger, Tursun Ablekim, Santosh Swain, Kelvin Lynn, Ana Kanevce, Jeffery Aguiar

Research output: Contribution to journalArticlepeer-review

11 Scopus Citations


Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

Original languageAmerican English
Pages (from-to)1650-1653
Number of pages4
JournalIEEE Journal of Photovoltaics
Issue number6
StatePublished - Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

  • NREL/JA-5K00-65799


  • Characterization of defects in photovoltaic (PV)
  • CIGS and CdTe thin-film solar cells
  • microstructure


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