Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV

James Burst; Joel Duenow; Helio Moutinho; Chun Sheng Jiang; Mowafak Al-Jassim; Matthew Reese; David Albin; Eric Colegrove; Darius Kuciauskas; Teresa Barnes; Wyatt Metzger; Tursun Ablekim; Santosh Swain; Kelvin Lynn; Ana Kanevce; Jeffery Aguiar

doi:10.1109/JPHOTOV.2016.2598274

Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV

James Burst, Joel Duenow, Helio Moutinho, Chun Sheng Jiang, Mowafak Al-Jassim, Matthew Reese, David Albin, Eric Colegrove, Darius Kuciauskas, Teresa Barnes, Wyatt Metzger, Tursun Ablekim, Santosh Swain, Kelvin Lynn, Ana Kanevce, Jeffery Aguiar

Washington State University

Research output: Contribution to journal › Article › peer-review

14 Scopus Citations

Abstract

Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (V_OC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 10⁴ cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

Original language	American English
Pages (from-to)	1650-1653
Number of pages	4
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2598274 https://doi.org/10.1109/JPHOTOV.2016.2598274
State	Published - Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/JA-5K00-65799

Keywords

Characterization of defects in photovoltaic (PV)
CIGS and CdTe thin-film solar cells
microstructure

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Burst, J., Duenow, J., Moutinho, H., Jiang, C. S., Al-Jassim, M., Reese, M., Albin, D., Colegrove, E., Kuciauskas, D., Barnes, T., Metzger, W., Ablekim, T., Swain, S., Lynn, K., Kanevce, A., & Aguiar, J. (2016). Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV. IEEE Journal of Photovoltaics, 6(6), 1650-1653. https://doi.org/10.1109/JPHOTOV.2016.2598274, https://doi.org/10.1109/JPHOTOV.2016.2598274

@article{17ee629dd6bc4535bd45d166ec190e34,

title = "Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV",

abstract = "Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.",

keywords = "Characterization of defects in photovoltaic (PV), CIGS and CdTe thin-film solar cells, microstructure",

author = "James Burst and Joel Duenow and Helio Moutinho and Jiang, \{Chun Sheng\} and Mowafak Al-Jassim and Matthew Reese and David Albin and Eric Colegrove and Darius Kuciauskas and Teresa Barnes and Wyatt Metzger and Tursun Ablekim and Santosh Swain and Kelvin Lynn and Ana Kanevce and Jeffery Aguiar",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = nov,

doi = "10.1109/JPHOTOV.2016.2598274",

language = "American English",

volume = "6",

pages = "1650--1653",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

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}

Burst, J, Duenow, J, Moutinho, H, Jiang, CS , Al-Jassim, M , Reese, M, Albin, D, Colegrove, E , Kuciauskas, D , Barnes, T, Metzger, W, Ablekim, T, Swain, S, Lynn, K, Kanevce, A & Aguiar, J 2016, 'Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV', IEEE Journal of Photovoltaics, vol. 6, no. 6, pp. 1650-1653. https://doi.org/10.1109/JPHOTOV.2016.2598274, https://doi.org/10.1109/JPHOTOV.2016.2598274

TY - JOUR

T1 - Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV

AU - Burst, James

AU - Duenow, Joel

AU - Moutinho, Helio

AU - Jiang, Chun Sheng

AU - Al-Jassim, Mowafak

AU - Reese, Matthew

AU - Albin, David

AU - Colegrove, Eric

AU - Kuciauskas, Darius

AU - Barnes, Teresa

AU - Metzger, Wyatt

AU - Ablekim, Tursun

AU - Swain, Santosh

AU - Lynn, Kelvin

AU - Kanevce, Ana

AU - Aguiar, Jeffery

PY - 2016/11

Y1 - 2016/11

N2 - Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

AB - Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.

KW - Characterization of defects in photovoltaic (PV)

KW - CIGS and CdTe thin-film solar cells

KW - microstructure

UR - https://www.scopus.com/pages/publications/85027049983

U2 - 10.1109/JPHOTOV.2016.2598274

DO - 10.1109/JPHOTOV.2016.2598274

M3 - Article

AN - SCOPUS:85027049983

SN - 2156-3381

VL - 6

SP - 1650

EP - 1653

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

ER -

Interface Characterization of Single-Crystal CdTe Solar Cells with VOC > 950 mV

Abstract

Bibliographical note

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Keywords

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