Abstract
Buffer layers, such as CdS and MgxZn1-xO (MZO), are critical for CdTe and other thin film polycrystalline solar cells. A ternary compound, such as MZO, allows for interface engineering by adjusting composition, bandgap, and doping to manipulate barriers and recombination to enhance thin film efficiencies toward 25%. Here, theoretical studies demonstrate the enormous impact of front interface offset and emitter doping have on device performance. The results reveal it is possible to achieve 25% device efficiency with open-circuit voltage >1 V, even for 105 cm/s recombination velocity, provided the interface offsets and doping are properly engineered.
Original language | American English |
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Pages (from-to) | 5135-5139 |
Number of pages | 5 |
Journal | ACS Applied Energy Materials |
Volume | 1 |
Issue number | 10 |
DOIs | |
State | Published - 2018 |
Bibliographical note
Publisher Copyright:Copyright © 2018 American Chemical Society.
NREL Publication Number
- NREL/JA-5K00-72328
Keywords
- cadmium telluride
- CdTe
- MgZnO
- recombination
- thin film solar cells