Abstract
Low-temperature (10 K) cw-upconversion of infrared light into visible light (red, orange, green) is observed from single heterojunctions and undoped quantum wells of GaAs(ordered)-AlGaInP2; an increase in photon energy up to 700 meV is obtained. The upconverted luminescence has the same energy as the AlGaInP2 band gaps, and disappears when the excitation energy is tuned below the GaAs band gap.Interface-induced cold Auger processes together with the presence of trapped states for both electrons and holes in these alloys are proposed as the mechanism for this process.
| Original language | American English |
|---|---|
| Pages | Vol. 2: 991-994 |
| Number of pages | 4 |
| State | Published - 1996 |
| Event | 23rd International Conference on the Physics of Semiconductors - Berlin, Germany Duration: 21 Jul 1996 → 26 Jul 1996 |
Conference
| Conference | 23rd International Conference on the Physics of Semiconductors |
|---|---|
| City | Berlin, Germany |
| Period | 21/07/96 → 26/07/96 |
NREL Publication Number
- NREL/CP-590-24408