Interface-Induced Conversion of Infrared to Visible Light at Semiconductor Interfaces

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    Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered AlxGa1-xInP2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of theup-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this.
    Original languageAmerican English
    Pages (from-to)R5263-R5266
    JournalPhysical Review B
    Issue number8
    StatePublished - 1996

    NREL Publication Number

    • NREL/JA-451-23005


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