Interface Investigation of ZnO/CdS/CuIn1-xGaxSe2/Mo Solar Cells

F. S. Hasoon; H. A. Al-Thani; K. M. Jones; Y. Yan; H. R. Moutinho; M. Young; S. E. Asher; J. Alleman; R. Bhattacharya; K. Ramanathan; J. Keane; M. M. Al-Jassim

doi:10.1557/proc-668-h6.8

Interface Investigation of ZnO/CdS/CuIn1-xGaxSe2/Mo Solar Cells

F. S. Hasoon, H. A. Al-Thani, K. M. Jones, Y. Yan, H. R. Moutinho, M. Young, S. E. Asher, J. Alleman, R. Bhattacharya, K. Ramanathan, J. Keane, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Graded-band-gap CuIn_1-xGa_xSe₂ (CIGS) absorbers with Ga/Ga+In value in the 20%-30% range have a demonstrated efficiency of 18.8%. For CdS-containing devices, the short-circuit current density (J_sc) has almost reached its expected maximum. However, the open-circuit voltage of CIGS solar cells is limited by the surface microstructure and chemistry. In this work, we examine the microstructural properties and chemistry of CIGS. We also attempted to correlate the above observations and device performance.

Original language	American English
Pages	H681-H687
DOIs	https://doi.org/10.1557/proc-668-h6.8
State	Published - 2001
Event	II-IV Compound Semiconductor Photovoltaic Materials: Materials Research Society Symposium - San Francisco, California Duration: 16 Apr 2001 → 20 Apr 2001

Conference

Conference	II-IV Compound Semiconductor Photovoltaic Materials: Materials Research Society Symposium
City	San Francisco, California
Period	16/04/01 → 20/04/01

NREL Publication Number

NREL/CP-520-30392

Access to Document

10.1557/proc-668-h6.8

Cite this

Hasoon, F. S., Al-Thani, H. A., Jones, K. M., Yan, Y., Moutinho, H. R., Young, M., Asher, S. E., Alleman, J., Bhattacharya, R., Ramanathan, K., Keane, J., & Al-Jassim, M. M. (2001). Interface Investigation of ZnO/CdS/CuIn1-xGaxSe2/Mo Solar Cells. H681-H687. Paper presented at II-IV Compound Semiconductor Photovoltaic Materials: Materials Research Society Symposium, San Francisco, California. https://doi.org/10.1557/proc-668-h6.8

@conference{1ee18048dd5e4b61ae85cc8dda5c26eb,

title = "Interface Investigation of ZnO/CdS/CuIn1-xGaxSe2/Mo Solar Cells",

abstract = "Graded-band-gap CuIn1-xGaxSe2 (CIGS) absorbers with Ga/Ga+In value in the 20%-30% range have a demonstrated efficiency of 18.8%. For CdS-containing devices, the short-circuit current density (Jsc) has almost reached its expected maximum. However, the open-circuit voltage of CIGS solar cells is limited by the surface microstructure and chemistry. In this work, we examine the microstructural properties and chemistry of CIGS. We also attempted to correlate the above observations and device performance.",

author = "Hasoon, {F. S.} and Al-Thani, {H. A.} and Jones, {K. M.} and Y. Yan and Moutinho, {H. R.} and M. Young and Asher, {S. E.} and J. Alleman and R. Bhattacharya and K. Ramanathan and J. Keane and Al-Jassim, {M. M.}",

year = "2001",

doi = "10.1557/proc-668-h6.8",

language = "American English",

pages = "H681--H687",

note = "II-IV Compound Semiconductor Photovoltaic Materials: Materials Research Society Symposium ; Conference date: 16-04-2001 Through 20-04-2001",

}

Hasoon, FS, Al-Thani, HA, Jones, KM, Yan, Y, Moutinho, HR, Young, M, Asher, SE, Alleman, J, Bhattacharya, R, Ramanathan, K, Keane, J & Al-Jassim, MM 2001, 'Interface Investigation of ZnO/CdS/CuIn1-xGaxSe2/Mo Solar Cells', Paper presented at II-IV Compound Semiconductor Photovoltaic Materials: Materials Research Society Symposium, San Francisco, California, 16/04/01 - 20/04/01 pp. H681-H687. https://doi.org/10.1557/proc-668-h6.8

TY - CONF

T1 - Interface Investigation of ZnO/CdS/CuIn1-xGaxSe2/Mo Solar Cells

AU - Hasoon, F. S.

AU - Al-Thani, H. A.

AU - Jones, K. M.

AU - Yan, Y.

AU - Moutinho, H. R.

AU - Young, M.

AU - Asher, S. E.

AU - Alleman, J.

AU - Bhattacharya, R.

AU - Ramanathan, K.

AU - Keane, J.

AU - Al-Jassim, M. M.

PY - 2001

Y1 - 2001

N2 - Graded-band-gap CuIn1-xGaxSe2 (CIGS) absorbers with Ga/Ga+In value in the 20%-30% range have a demonstrated efficiency of 18.8%. For CdS-containing devices, the short-circuit current density (Jsc) has almost reached its expected maximum. However, the open-circuit voltage of CIGS solar cells is limited by the surface microstructure and chemistry. In this work, we examine the microstructural properties and chemistry of CIGS. We also attempted to correlate the above observations and device performance.

AB - Graded-band-gap CuIn1-xGaxSe2 (CIGS) absorbers with Ga/Ga+In value in the 20%-30% range have a demonstrated efficiency of 18.8%. For CdS-containing devices, the short-circuit current density (Jsc) has almost reached its expected maximum. However, the open-circuit voltage of CIGS solar cells is limited by the surface microstructure and chemistry. In this work, we examine the microstructural properties and chemistry of CIGS. We also attempted to correlate the above observations and device performance.

UR - http://www.scopus.com/inward/record.url?scp=17644441760&partnerID=8YFLogxK

U2 - 10.1557/proc-668-h6.8

DO - 10.1557/proc-668-h6.8

M3 - Paper

AN - SCOPUS:17644441760

SP - H681-H687

T2 - II-IV Compound Semiconductor Photovoltaic Materials: Materials Research Society Symposium

Y2 - 16 April 2001 through 20 April 2001

ER -

Interface Investigation of ZnO/CdS/CuIn1-xGaxSe2/Mo Solar Cells

Abstract

Conference

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this