Interface Recombination Velocity Measurement by a Contactless Microwave Technique

R. K. Ahrenkiel, J. Dashdorj

Research output: Contribution to journalArticlepeer-review

16 Scopus Citations

Abstract

The recombination velocity measurement of silicon surfaces and interfaces was discussed using resonant-coupled photoconductive decay (RCPCD) . The values of surface recombination velocity (SRV) measured were found to be abnormally small compared to expected values for silicon surfaces. The surface lifetime which decreased with injection level was suggested to be due to the partial filling of surface states by the measuring light pulse. It was suggested that to get the true low-injection surface lifetime and associated recombination velocity, the measurement light intensity must be reduced to a range for which there is not intensity dependence.

Original languageAmerican English
Pages (from-to)2063-2067
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - 2004

NREL Publication Number

  • NREL/JA-520-34520

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