Interfaces Between CdTe and ALD Al2O3

Craig L. Perkins; Tursun Ablekim; Teresa M. Barnes; Darius Kuciauskas; Kelvin G. Lynn; William Nemeth; Matthew O. Reese; Santosh K. Swain; Wyatt K. Metzger

doi:10.1109/JPHOTOV.2018.2870139

Interfaces Between CdTe and ALD Al2O3

Craig L. Perkins, Tursun Ablekim, Teresa M. Barnes, Darius Kuciauskas, Kelvin G. Lynn, William Nemeth, Matthew O. Reese, Santosh K. Swain, Wyatt K. Metzger

Research output: Contribution to journal › Article › peer-review

21 Scopus Citations

Abstract

We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al₂O₃/CdTe structures with CdCl₂ and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al₂O₃. Direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms.

Original language	American English
Article number	8474966
Pages (from-to)	1858-1861
Number of pages	4
Journal	IEEE Journal of Photovoltaics
Volume	8
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2018.2870139 https://doi.org/10.1109/JPHOTOV.2018.2870139
State	Published - 2018

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

NREL/JA-5K00-72454

Keywords

Alumina
CdTe
interface
passivation

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title = "Interfaces Between CdTe and ALD Al2O3",

abstract = "We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al2O3/CdTe structures with CdCl2 and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al2O3. Direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms.",

keywords = "Alumina, CdTe, interface, passivation",

author = "Perkins, {Craig L.} and Tursun Ablekim and Barnes, {Teresa M.} and Darius Kuciauskas and Lynn, {Kelvin G.} and William Nemeth and Reese, {Matthew O.} and Swain, {Santosh K.} and Metzger, {Wyatt K.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

doi = "10.1109/JPHOTOV.2018.2870139",

language = "American English",

volume = "8",

pages = "1858--1861",

journal = "IEEE Journal of Photovoltaics",

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T1 - Interfaces Between CdTe and ALD Al2O3

AU - Perkins, Craig L.

AU - Ablekim, Tursun

AU - Barnes, Teresa M.

AU - Kuciauskas, Darius

AU - Lynn, Kelvin G.

AU - Nemeth, William

AU - Reese, Matthew O.

AU - Swain, Santosh K.

AU - Metzger, Wyatt K.

PY - 2018

Y1 - 2018

N2 - We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al2O3/CdTe structures with CdCl2 and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al2O3. Direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms.

AB - We present a combination of X-ray photoelectron spectroscopy (XPS) and time-resolved photoluminescence (TRPL) to probe the details of interface formation between CdTe and alumina deposited by atomic layer deposition (ALD). Alumina ALD using water as the oxygen source causes the elimination of Te oxides that are initially present on air-exposed CdTe surfaces. TRPL on the resulting CdTe interface indicates some degree of passivation. On the other hand, postgrowth treatment of Al2O3/CdTe structures with CdCl2 and oxygen causes regrowth of Te oxides. Some of these structures show improved lifetimes, thereby pointing toward a critical role for Te oxides in interfacial CdTe passivation by Al2O3. Direct measurement of band positions with XPS indicates that the passivation is caused primarily by chemical rather than field effect mechanisms.

KW - Alumina

KW - CdTe

KW - interface

KW - passivation

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EP - 1861

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

M1 - 8474966

ER -

Interfaces Between CdTe and ALD Al2O3

Abstract

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Keywords

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