Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Lorelle Mansfield; Ina Martin; Tricia Oyster; Rachael Matthews; Emily Pentzer; Roger French; Timothy Peshek

doi:10.1109/PVSC.2017.8366313

Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Lorelle Mansfield, Ina Martin, Tricia Oyster, Rachael Matthews, Emily Pentzer, Roger French, Timothy Peshek

Materials Science

Case Western Reserve University

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se₂ device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

Original language	American English
Pages	377-380
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2017.8366313
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NREL Publication Number

NREL/CP-5K00-67954

Keywords

Aluminum-doped zinc oxide
CIGS
Degradation
Photovoltaic cells
Transparent conductive oxide

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10.1109/PVSC.2017.8366313

Cite this

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title = "Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices",

abstract = "Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.",

keywords = "Aluminum-doped zinc oxide, CIGS, Degradation, Photovoltaic cells, Transparent conductive oxide",

author = "Lorelle Mansfield and Ina Martin and Tricia Oyster and Rachael Matthews and Emily Pentzer and Roger French and Timothy Peshek",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366313",

language = "American English",

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TY - CONF

T1 - Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

AU - Mansfield, Lorelle

AU - Martin, Ina

AU - Oyster, Tricia

AU - Matthews, Rachael

AU - Pentzer, Emily

AU - French, Roger

AU - Peshek, Timothy

PY - 2017

Y1 - 2017

N2 - Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

AB - Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In,Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

KW - Aluminum-doped zinc oxide

KW - CIGS

KW - Degradation

KW - Photovoltaic cells

KW - Transparent conductive oxide

UR - http://www.scopus.com/inward/record.url?scp=85048512979&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366313

DO - 10.1109/PVSC.2017.8366313

M3 - Paper

AN - SCOPUS:85048512979

SP - 377

EP - 380

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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