Interfacial Optical Spectra in Amorphous Silicon Based pin Solar Cells

Kai Zhu; J. H. Lyou; E. A. Schiff; R. S. Crandall; G. Ganguly; S. S. Hegedus

doi:10.1109/PVSC.2000.915976

Interfacial Optical Spectra in Amorphous Silicon Based pin Solar Cells

Kai Zhu, J. H. Lyou, E. A. Schiff, R. S. Crandall, G. Ganguly, S. S. Hegedus

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication.

Original language	American English
Pages	725-727
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2000.915976
State	Published - 2000
Externally published	Yes
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 15 Sep 2000 → 22 Sep 2000

Conference

Conference	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	15/09/00 → 22/09/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

NREL Publication Number

NREL/CP-520-30341

Access to Document

10.1109/PVSC.2000.915976

Cite this

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title = "Interfacial Optical Spectra in Amorphous Silicon Based pin Solar Cells",

abstract = "We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication.",

author = "Kai Zhu and Lyou, {J. H.} and Schiff, {E. A.} and Crandall, {R. S.} and G. Ganguly and Hegedus, {S. S.}",

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year = "2000",

doi = "10.1109/PVSC.2000.915976",

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T1 - Interfacial Optical Spectra in Amorphous Silicon Based pin Solar Cells

AU - Zhu, Kai

AU - Lyou, J. H.

AU - Schiff, E. A.

AU - Crandall, R. S.

AU - Ganguly, G.

AU - Hegedus, S. S.

PY - 2000

Y1 - 2000

N2 - We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication.

AB - We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication.

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U2 - 10.1109/PVSC.2000.915976

DO - 10.1109/PVSC.2000.915976

M3 - Paper

AN - SCOPUS:84949556600

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T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000

Y2 - 15 September 2000 through 22 September 2000

ER -

Interfacial Optical Spectra in Amorphous Silicon Based pin Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

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