Interfacial Properties of Indium Tin Oxide/Indium Phosphide Devices

P. Sheldon, R. K. Ahrenkiel, R. E. Hayes, P. E. Russell

Research output: Contribution to journalArticlepeer-review

15 Scopus Citations


Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.

Original languageAmerican English
Pages (from-to)727-729
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - 1982

NREL Publication Number

  • ACNR/JA-213-4100


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