Interfacial Properties of Indium Tin Oxide/Indium Phosphide Devices

P. Sheldon; R. K. Ahrenkiel; R. E. Hayes; P. E. Russell

doi:10.1063/1.93656

Interfacial Properties of Indium Tin Oxide/Indium Phosphide Devices

P. Sheldon, R. K. Ahrenkiel, R. E. Hayes, P. E. Russell

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.

Original language	American English
Pages (from-to)	727-729
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	8
DOIs	https://doi.org/10.1063/1.93656 https://doi.org/10.1063/1.93656
State	Published - 1982

NREL Publication Number

ACNR/JA-213-4100

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title = "Interfacial Properties of Indium Tin Oxide/Indium Phosphide Devices",

abstract = "Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 {\AA} into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.",

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journal = "Applied Physics Letters",

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AU - Sheldon, P.

AU - Ahrenkiel, R. K.

AU - Hayes, R. E.

AU - Russell, P. E.

PY - 1982

Y1 - 1982

N2 - Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.

AB - Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.

UR - https://www.scopus.com/pages/publications/36749112369

U2 - 10.1063/1.93656

DO - 10.1063/1.93656

M3 - Article

AN - SCOPUS:36749112369

SN - 0003-6951

VL - 41

SP - 727

EP - 729

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Interfacial Properties of Indium Tin Oxide/Indium Phosphide Devices

Abstract

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