Intergrain Variations of the Chemical and Electronic Surface Structure of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

R. G. Wilks; I. Repins; M. A. Contreras; R. Félix; J. Herrero-Albillos; L. Tati-Bismaths; F. Kronast; R. Noufi; M. Bär

doi:10.1063/1.4751261

Intergrain Variations of the Chemical and Electronic Surface Structure of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

R. G. Wilks, I. Repins, M. A. Contreras, R. Félix, J. Herrero-Albillos, L. Tati-Bismaths, F. Kronast, R. Noufi, M. Bär

Materials, Chemical, and Computational Science

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

The μm-scale spatial distribution of the elements of polycrystalline Cu(In _1-xGa _x)Se ₂ absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x = Ga/(In Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV.

Original language	American English
Article number	103908
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.4751261 https://doi.org/10.1063/1.4751261
State	Published - 3 Sep 2012

NREL Publication Number

NREL/JA-5200-56824

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Wilks, R. G., Repins, I., Contreras, M. A., Félix, R., Herrero-Albillos, J., Tati-Bismaths, L., Kronast, F., Noufi, R., & Bär, M. (2012). Intergrain Variations of the Chemical and Electronic Surface Structure of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers. Applied Physics Letters, 101(10), Article 103908. https://doi.org/10.1063/1.4751261, https://doi.org/10.1063/1.4751261

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title = "Intergrain Variations of the Chemical and Electronic Surface Structure of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers",

abstract = "The μm-scale spatial distribution of the elements of polycrystalline Cu(In 1-xGa x)Se 2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x = Ga/(In Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV.",

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Wilks, RG, Repins, I, Contreras, MA, Félix, R, Herrero-Albillos, J, Tati-Bismaths, L, Kronast, F, Noufi, R & Bär, M 2012, 'Intergrain Variations of the Chemical and Electronic Surface Structure of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers', Applied Physics Letters, vol. 101, no. 10, 103908. https://doi.org/10.1063/1.4751261, https://doi.org/10.1063/1.4751261

TY - JOUR

T1 - Intergrain Variations of the Chemical and Electronic Surface Structure of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

AU - Wilks, R. G.

AU - Repins, I.

AU - Contreras, M. A.

AU - Félix, R.

AU - Herrero-Albillos, J.

AU - Tati-Bismaths, L.

AU - Kronast, F.

AU - Noufi, R.

AU - Bär, M.

PY - 2012/9/3

Y1 - 2012/9/3

N2 - The μm-scale spatial distribution of the elements of polycrystalline Cu(In 1-xGa x)Se 2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x = Ga/(In Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV.

AB - The μm-scale spatial distribution of the elements of polycrystalline Cu(In 1-xGa x)Se 2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x = Ga/(In Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV.

UR - https://www.scopus.com/pages/publications/84866039329

U2 - 10.1063/1.4751261

DO - 10.1063/1.4751261

M3 - Article

AN - SCOPUS:84866039329

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103908

ER -

Intergrain Variations of the Chemical and Electronic Surface Structure of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers

Abstract

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