Intermixing at the CdS/CdTe Interface and Its Effect on Device Performance

R. G. Dhere, D. S. Albin, D. H. Rose, S. E. Asher, K. M. Jones, M. M. Al-Jassim, H. R. Moutinho, P. Sheldon

Research output: Contribution to conferencePaperpeer-review

40 Scopus Citations


A study of the CdS/CdTe interface was performed on glass/SnO2/CdS/CdTe device structures. CdS layers were deposited by chemical solution growth to a thickness of 80-100 nm, and CdTe was deposited by close-spaced sublimation at substrate temperatures of 500°, 550°, and 600 °C. Post-deposition CdCl2 heat treatment was performed at 400 °C. Samples were analyzed by optical spectroscopy, secondary ion mass spectrometry (SIMS), spectral response, and current-voltage measurements. SIMS analysis shows that the intermixing of CdS and CdTe is a function of substrate temperature and post-deposition CdCl2 heat treatment. The degree of intermixing increases with increases in substrate temperature and the intensity of CdCl2 heat treatment. Optical analysis and X-Ray diffraction data show that the phases of CdSxTe1-x are also a function of the same parameters. Formation of a Te-rich CdSxTe1-x alloy is favored for films deposited at higher substrate temperatures. Spectral response of the devices is affected by the degree of alloying at the interface. The degree of alloying is indicated by simultaneous changes in long wavelength response (due to the formation of lower bandgap intermixed CdSxTe1-x) and the short wavelength response (due to the change in CdS thickness). Device performance is heavily influenced by alloying at the interface. With optimized intermixing, improvements in Voc and diode quality factors are observed in the resulting devices.

Original languageAmerican English
Number of pages6
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996


ConferenceProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA

NREL Publication Number

  • NREL/CP-413-21088


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