Internal Electric Field Profile in Thin Film Hydrogenated Amorphous Silicon Diodes Studied by the Transient-Null-Current Method

We demonstrate that the internal field of a thin a-Si:H pin solar cells can be measured using the transient-null-current method. This method was previously developed to measure the internal field profile in a-Si alloy Schottky barrier. The internal electric field profile was determined by measuring the forward-bias voltages that tune the transient photocurrents generated by a pulsed laser at avarious wavelengths to zero. We adopt the same technique to a-Si:H p-i-n solar cells. In the case of p-i-n structure, we need to consider both space charge contributed by photogeerated carriers and carrier recombination which disturb the internal field. We use two critical conditions to minimize these effects. (1) To limit the contribution of photocarriers to space-charge distribution, the totalcharge collected is less than 10-10 C per pulse, and a repetition rate 1 Hz is used to ensure that the diode remains close to its equilibruim state. (2) The measuring time window is about 1 - 6 ..mu..s following the displacement current. Typically the RC constant of diode is <1 ..mu..s and the rise time of the forward-bias recombination current is 6.0 x ..mu..s. We apply the signal average toprocess the forward-bias voltage. The error is within +/- 0.05 V. With this technique we can study the effect of variety of structure design or processing on the device performance.