Interpretation of Capacitance-Voltage Characteristics in Thin-Film Solar Cells Using a Detailed Numerical Model

    Research output: Contribution to conferencePaper

    Abstract

    The objective of this document is to present a numerical simulation tool that can be used as an aid in the interpretation of capacitance-voltage characteristics of thin-film solar cells. The example simulations presented here are for a ZnO/CdS/CIS cell, but the simulation tool can be used for a variety of solar cells, including CdTe. Model equations for the simulation of the small-signal behaviorof semiconductor devices are presented. Sample simulations incorporating these small-signal equations into a detailed numerical model are interpreted.
    Original languageAmerican English
    Pages905-908
    Number of pages4
    DOIs
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996

    Conference

    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.
    Period13/05/9617/05/96

    Bibliographical note

    Work performed by Purdue University, West Lafayette, Indiana

    NREL Publication Number

    • NREL/CP-22421

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