Interstitial Transition Atom Impurities in Silicon: Electronic Structure and Lattice Relaxation

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)6047-6062
    Number of pages16
    JournalJournal of Physics. C, Solid State Physics
    Issue number34
    StatePublished - 1984

    Bibliographical note

    Work performed by Department of Theoretical Physics, University of Lund, Lund, Sweden, and the Solar Energy Research Institute, Golden, Colorado

    NREL Publication Number

    • ACNR/JA-212-4681

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