Intragrain Charge Transport in Kesterite Thin Films - Limits Arising from Carrier Localization

Ingrid Repins; Hannes Hempel; Alex Redinger; Camille Moisan; Gerardo Larramona; Gilles Dennler; Martin Handwerg; Saskia Fischer; Rainer Eichberger; Thomas Unold

doi:10.1063/1.4965868

Intragrain Charge Transport in Kesterite Thin Films - Limits Arising from Carrier Localization

Ingrid Repins, Hannes Hempel, Alex Redinger, Camille Moisan, Gerardo Larramona, Gilles Dennler, Martin Handwerg, Saskia Fischer, Rainer Eichberger, Thomas Unold

Materials Science

Research output: Contribution to journal › Article › peer-review

31 Scopus Citations

Abstract

Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu₂ZnSn(S,Se)₄ kesterite thin films are found to increase from 32 to 140 cm² V⁻¹ s⁻¹ with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

Original language	American English
Article number	Article No. 175302
Number of pages	6
Journal	Journal of Applied Physics
Volume	120
Issue number	17
DOIs	https://doi.org/10.1063/1.4965868 https://doi.org/10.1063/1.4965868
State	Published - 7 Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

NREL Publication Number

NREL/JA-5J00-67507

Keywords

band gap
grain boundaries
hall mobility
hole mobility
solar cells

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https://www.nrel.gov/docs/fy17osti/67507.pdf

Cite this

Repins, I., Hempel, H., Redinger, A., Moisan, C., Larramona, G., Dennler, G., Handwerg, M., Fischer, S., Eichberger, R., & Unold, T. (2016). Intragrain Charge Transport in Kesterite Thin Films - Limits Arising from Carrier Localization. Journal of Applied Physics, 120(17), Article Article No. 175302. https://doi.org/10.1063/1.4965868, https://doi.org/10.1063/1.4965868

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title = "Intragrain Charge Transport in Kesterite Thin Films - Limits Arising from Carrier Localization",

abstract = "Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V−1 s−1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.",

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author = "Ingrid Repins and Hannes Hempel and Alex Redinger and Camille Moisan and Gerardo Larramona and Gilles Dennler and Martin Handwerg and Saskia Fischer and Rainer Eichberger and Thomas Unold",

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AU - Repins, Ingrid

AU - Hempel, Hannes

AU - Redinger, Alex

AU - Moisan, Camille

AU - Larramona, Gerardo

AU - Dennler, Gilles

AU - Handwerg, Martin

AU - Fischer, Saskia

AU - Eichberger, Rainer

AU - Unold, Thomas

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N2 - Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V−1 s−1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

AB - Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V−1 s−1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

KW - band gap

KW - grain boundaries

KW - hall mobility

KW - hole mobility

KW - solar cells

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M1 - Article No. 175302

ER -

Intragrain Charge Transport in Kesterite Thin Films - Limits Arising from Carrier Localization

Abstract

Bibliographical note

NREL Publication Number

Keywords

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