Intragrain Charge Transport in Kesterite Thin Films - Limits Arising from Carrier Localization

Ingrid Repins, Hannes Hempel, Alex Redinger, Camille Moisan, Gerardo Larramona, Gilles Dennler, Martin Handwerg, Saskia Fischer, Rainer Eichberger, Thomas Unold

Research output: Contribution to journalArticlepeer-review

31 Scopus Citations


Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V−1 s−1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

Original languageAmerican English
Article numberArticle No. 175302
Number of pages6
JournalJournal of Applied Physics
Issue number17
StatePublished - 7 Nov 2016

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

NREL Publication Number

  • NREL/JA-5J00-67507


  • band gap
  • grain boundaries
  • hall mobility
  • hole mobility
  • solar cells


Dive into the research topics of 'Intragrain Charge Transport in Kesterite Thin Films - Limits Arising from Carrier Localization'. Together they form a unique fingerprint.

Cite this