Intrinsic Defect Engineering of Cuprous Oxide to Enhance Electrical Transport Properties for Photovoltaic Applications

Steven Johnston; Michael Lloyd; Sin-Cheng Siah; Riley Brandt; James Serdy; Yun Lee; Tonio Buonassisi

doi:10.1109/PVSC-Vol2.2014.7588254

Intrinsic Defect Engineering of Cuprous Oxide to Enhance Electrical Transport Properties for Photovoltaic Applications

Steven Johnston, Michael Lloyd, Sin-Cheng Siah, Riley Brandt, James Serdy, Yun Lee, Tonio Buonassisi

Materials Science

Massachusetts Institute of Technology

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

Intrinsic point-defect species in cuprous oxide films are manipulated based on their thermodynamic properties via the implementation of a controlled annealing process. A wide range of electrical properties is demonstrated, with a window suitable for high-quality solar cell devices. A variation of carrier concentration over two orders of magnitude is demonstrated. Minority carrier lifetime is investigated by means of microwave photoconductance decay measurements, demonstrating a strong correlation with carrier concentration. Spectrally resolved photoluminescence yields are analyzed to provide insight into lifetime limiting mechanisms as a function of Cu₂O processing parameters. Hall measurements of carrier mobility and concentration are taken at room temperature to provide insight into the effect of these processing conditions on net ionized defect concentration.

Original language	American English
Pages	3443-3445
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC-Vol2.2014.7588254 https://doi.org/10.1109/PVSC-Vol2.2014.7588254
State	Published - 11 Oct 2016
Event	40th IEEE Photovoltaic Specialists Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialists Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5K00-67509

Keywords

Annealing
Charge carrier lifetime
Copper compounds
Doping
Photovoltaic cells

UN SDGs

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Johnston, S., Lloyd, M., Siah, S.-C., Brandt, R., Serdy, J., Lee, Y., & Buonassisi, T. (2016). Intrinsic Defect Engineering of Cuprous Oxide to Enhance Electrical Transport Properties for Photovoltaic Applications. 3443-3445. Paper presented at 40th IEEE Photovoltaic Specialists Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC-Vol2.2014.7588254, https://doi.org/10.1109/PVSC-Vol2.2014.7588254

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abstract = "Intrinsic point-defect species in cuprous oxide films are manipulated based on their thermodynamic properties via the implementation of a controlled annealing process. A wide range of electrical properties is demonstrated, with a window suitable for high-quality solar cell devices. A variation of carrier concentration over two orders of magnitude is demonstrated. Minority carrier lifetime is investigated by means of microwave photoconductance decay measurements, demonstrating a strong correlation with carrier concentration. Spectrally resolved photoluminescence yields are analyzed to provide insight into lifetime limiting mechanisms as a function of Cu2O processing parameters. Hall measurements of carrier mobility and concentration are taken at room temperature to provide insight into the effect of these processing conditions on net ionized defect concentration.",

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Johnston, S, Lloyd, M, Siah, S-C, Brandt, R, Serdy, J, Lee, Y & Buonassisi, T 2016, 'Intrinsic Defect Engineering of Cuprous Oxide to Enhance Electrical Transport Properties for Photovoltaic Applications', Paper presented at 40th IEEE Photovoltaic Specialists Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 3443-3445. https://doi.org/10.1109/PVSC-Vol2.2014.7588254, https://doi.org/10.1109/PVSC-Vol2.2014.7588254

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AU - Lee, Yun

AU - Buonassisi, Tonio

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AB - Intrinsic point-defect species in cuprous oxide films are manipulated based on their thermodynamic properties via the implementation of a controlled annealing process. A wide range of electrical properties is demonstrated, with a window suitable for high-quality solar cell devices. A variation of carrier concentration over two orders of magnitude is demonstrated. Minority carrier lifetime is investigated by means of microwave photoconductance decay measurements, demonstrating a strong correlation with carrier concentration. Spectrally resolved photoluminescence yields are analyzed to provide insight into lifetime limiting mechanisms as a function of Cu2O processing parameters. Hall measurements of carrier mobility and concentration are taken at room temperature to provide insight into the effect of these processing conditions on net ionized defect concentration.

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KW - Copper compounds

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T2 - 40th IEEE Photovoltaic Specialists Conference, PVSC 2014

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ER -

Intrinsic Defect Engineering of Cuprous Oxide to Enhance Electrical Transport Properties for Photovoltaic Applications

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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