Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductor Cu2ZnSnS4: Article No. 245204

Suhuai Wei

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	10
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.81.245204
State	Published - 2010

NREL Publication Number

@article{fb072cc1e88b4821b3769dce0ee5bf39,

title = "Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductor Cu2ZnSnS4: Article No. 245204",

keywords = "defects, semiconductors, solar cell efficiency",

author = "Suhuai Wei",

year = "2010",

doi = "10.1103/PhysRevB.81.245204",

language = "American English",

volume = "81",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "24",

}

TY - JOUR

T1 - Intrinsic Point Defects and Complexes in the Quaternary Kesterite Semiconductor Cu2ZnSnS4

T2 - Article No. 245204

AU - Wei, Suhuai

PY - 2010

Y1 - 2010

KW - defects

KW - semiconductors

KW - solar cell efficiency

U2 - 10.1103/PhysRevB.81.245204

DO - 10.1103/PhysRevB.81.245204

M3 - Article

SN - 1098-0121

VL - 81

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

ER -