Inverted Bulk-Heterojunction Organic Photovoltaic Device Using a Solution-Derived ZnO Underlayer

M. S. White; D. C. Olson; S. E. Shaheen; N. Kopidakis; D. S. Ginley

doi:10.1063/1.2359579

Inverted Bulk-Heterojunction Organic Photovoltaic Device Using a Solution-Derived ZnO Underlayer

M. S. White, D. C. Olson, S. E. Shaheen, N. Kopidakis, D. S. Ginley

Research output: Contribution to journal › Article › peer-review

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Abstract

Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.

Original language	American English
Article number	143517
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	14
DOIs	https://doi.org/10.1063/1.2359579 https://doi.org/10.1063/1.2359579
State	Published - 2006

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NREL/JA-520-39645

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abstract = "Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.",

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AU - Ginley, D. S.

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AB - Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device.

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Inverted Bulk-Heterojunction Organic Photovoltaic Device Using a Solution-Derived ZnO Underlayer

Abstract

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UN SDGs

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