Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Marius Zehender; Simon Svatek; Myles Steiner; Ivan Garcia; Pablo Garcia Linares; Emily Warren; Antonio Marti; Adele Tamboli; Elisa Antolin

doi:10.1109/PVSC45281.2020.9301000

Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Marius Zehender, Simon Svatek, Myles Steiner, Ivan Garcia, Pablo Garcia Linares, Emily Warren, Antonio Marti, Adele Tamboli, Elisa Antolin

Technical University of Madrid

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

Original language	American English
Pages	1517-1521
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC45281.2020.9301000 https://doi.org/10.1109/PVSC45281.2020.9301000
State	Published - 14 Jun 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: 15 Jun 2020 → 21 Aug 2020

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	15/06/20 → 21/08/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

NREL/CP-5900-75957

Keywords

(Al)GaInP/r/GaAs(p/n)
double-junction
III-V
inverted
solar cell
thin-film
three-terminal

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Zehender, M., Svatek, S., Steiner, M., Garcia, I., Garcia Linares, P., Warren, E., Marti, A., Tamboli, A., & Antolin, E. (2020). Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell. 1517-1521. Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada. https://doi.org/10.1109/PVSC45281.2020.9301000, https://doi.org/10.1109/PVSC45281.2020.9301000

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title = "Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell",

abstract = "Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.",

keywords = "(Al)GaInP/r/GaAs(p/n), double-junction, III-V, inverted, solar cell, thin-film, three-terminal",

author = "Marius Zehender and Simon Svatek and Myles Steiner and Ivan Garcia and {Garcia Linares}, Pablo and Emily Warren and Antonio Marti and Adele Tamboli and Elisa Antolin",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",

year = "2020",

month = jun,

day = "14",

doi = "10.1109/PVSC45281.2020.9301000",

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Zehender, M, Svatek, S, Steiner, M, Garcia, I, Garcia Linares, P, Warren, E, Marti, A, Tamboli, A & Antolin, E 2020, 'Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell', Paper presented at 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 15/06/20 - 21/08/20 pp. 1517-1521. https://doi.org/10.1109/PVSC45281.2020.9301000, https://doi.org/10.1109/PVSC45281.2020.9301000

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T1 - Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

AU - Zehender, Marius

AU - Svatek, Simon

AU - Steiner, Myles

AU - Garcia, Ivan

AU - Garcia Linares, Pablo

AU - Warren, Emily

AU - Marti, Antonio

AU - Tamboli, Adele

AU - Antolin, Elisa

PY - 2020/6/14

Y1 - 2020/6/14

N2 - Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

AB - Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enable contacting the intermediate layer (base) from the bottom, which improves the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

KW - (Al)GaInP/r/GaAs(p/n)

KW - double-junction

KW - III-V

KW - inverted

KW - solar cell

KW - thin-film

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U2 - 10.1109/PVSC45281.2020.9301000

DO - 10.1109/PVSC45281.2020.9301000

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T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Y2 - 15 June 2020 through 21 August 2020

ER -

Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Abstract

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Keywords

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