Abstract
We investigated potential-induced degradation (PID) in CuIn 1-x Ga x Se 2 (CIGS) mini-modules stressed in the laboratory. Small cores were removed from the modules and were subjected to analysis. We completed a proof-of-concept correlative study relating cathodoluminescence to sodium content via time-of-flight secondary-ion mass spectrometry imaging. By comparing one-dimensional depth profile results and three-dimensional tomography results on stressed and unstressed CIGS mini-modules, we can see that PID in CIGS results from sodium migration through absorber, most likely via grain boundaries. Potassium concentration distributions show little change when adding a voltage bias to a temperature and humidity stress. This suggests doping with other large alkali ions, such as cesium and rubidium, rather than sodium can increase the PID resistance of CIGS modules.
Original language | American English |
---|---|
Article number | 8630404 |
Pages (from-to) | 559-564 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 9 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2019 |
Bibliographical note
Publisher Copyright:© 2011-2012 IEEE.
NREL Publication Number
- NREL/JA-5K00-71525
Keywords
- Cathodoluminescence (CL)
- CIGS
- potential-induced degradation (PID)
- SIMS
- Sodium
- time-of-flight secondary-ion mass spectrometry (TOF-SIMS)