Investigating the Role of Copper in Arsenic Doped CdSeTe Photovoltaic Devices

Eric Colegrove, Matt Reese, David Albin, Joel Duenow, Brian Good, Helio Moutinho, Steve Johnston, Chun-Sheng Jiang, Darius Kuciauskas, Patrick O'Keefe, Xin Zheng, John Moseley, Mike Walls, Ali Abbas, Tom Fiducia

Research output: NRELPresentation


As part of NREL's development of arsenic doped CdSeTe devices, co-doping with copper has become a common practice and, despite little difference in carrier concentration (often ~1016 cm-3), co-doped devices regularly show improved Voc. Given the critical importance of improving Voc, we are investigating this trend with a wide variety of characterization techniques including SEM, EBSD, SIMS, PL, CL, XPS, TRPL, JVT, KPFM, and DLTS. Together these indicate that Cu facilitates improved absorber-buffer interface properties and potentially improved bulk absorber characteristics, though specific mechanisms have not yet been determined. Despite the improved performance of co-doped devices, Voc is still far below its potential, and we explore the possibility that this limitation is the result of low buffer doping in conjunction with high absorber doping.
Original languageAmerican English
Number of pages25
StatePublished - 2021

Publication series

NamePresented at the Riber Conference II-VI US Workshop, 25-28 October 2021, Chicago, Illinois

NREL Publication Number

  • NREL/PR-5K00-81367


  • arsenic doping
  • CdTe
  • photovoltaics


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