Investigation of Atomic-Layer-Deposited TiOx as Selective Electron and Hole Contacts to Crystalline Silicon

Paul Ndione, Takuya Matsui, Martin Bivour, Paul Hettich, Martin Hermle

Research output: Contribution to journalArticlepeer-review

29 Scopus Citations

Abstract

The applicability of atomic-layer-deposited titanium oxide (TiOx) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity is mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.

Original languageAmerican English
Pages (from-to)628-634
Number of pages7
JournalEnergy Procedia
Volume124
DOIs
StatePublished - 2017
Event7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Germany
Duration: 3 Apr 20175 Apr 2017

NREL Publication Number

  • NREL/JA-5J00-70503

Keywords

  • atomic layer deposition
  • carrier selective contact
  • crystalline silicon
  • solar cell
  • Titanium oxide

Fingerprint

Dive into the research topics of 'Investigation of Atomic-Layer-Deposited TiOx as Selective Electron and Hole Contacts to Crystalline Silicon'. Together they form a unique fingerprint.

Cite this