Investigation of Deep Impurity Levels in CdTe/CdS Solar Cells

    Research output: Contribution to conferencePaper

    Abstract

    We have studied deep impurity levels of CdTe/CdS solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and time-resolved photoluminescence (TRPL).
    Original languageAmerican English
    Pages279-280
    Number of pages2
    StatePublished - 2000
    EventProgram and NCPV Program Review Meeting 2000 - Denver, Colorado
    Duration: 16 Apr 200019 Apr 2000

    Conference

    ConferenceProgram and NCPV Program Review Meeting 2000
    CityDenver, Colorado
    Period16/04/0019/04/00

    NREL Publication Number

    • NREL/CP-520-28226

    Keywords

    • amorphous Si
    • applications
    • cadmium telluride (CdTe) photovoltaic solar cells modules
    • components
    • concentrators
    • copper indium diselenide (CIS)
    • crystalline silicon (x-Si) (c-Si)
    • manufacturing
    • markets
    • NCPV
    • photovoltaics (PV)
    • research and development (R&D)
    • systems
    • systems integration
    • thin films

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