Investigation of Deep Impurity Levels in CdTe/CdS Solar Cells

Research output: Contribution to conferencePaper

Abstract

We have studied deep impurity levels of CdTe/CdS solar cells by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and time-resolved photoluminescence (TRPL).
Original languageAmerican English
Pages279-280
Number of pages2
StatePublished - 2000
EventProgram and NCPV Program Review Meeting 2000 - Denver, Colorado
Duration: 16 Apr 200019 Apr 2000

Conference

ConferenceProgram and NCPV Program Review Meeting 2000
CityDenver, Colorado
Period16/04/0019/04/00

NREL Publication Number

  • NREL/CP-520-28226

Keywords

  • amorphous Si
  • applications
  • cadmium telluride (CdTe) photovoltaic solar cells modules
  • components
  • concentrators
  • copper indium diselenide (CIS)
  • crystalline silicon (x-Si) (c-Si)
  • manufacturing
  • markets
  • NCPV
  • photovoltaics (PV)
  • research and development (R&D)
  • systems
  • systems integration
  • thin films

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