Investigation of GaAs Surface Treatments for ZnSe Growth by Molecular Beam Epitaxy Without a Buffer Layer

Chaomin Zhang, Kirstin Alberi, Christiana Honsberg, Kwangwook Park

Research output: Contribution to journalArticlepeer-review

8 Scopus Citations

Abstract

Atomically clean and smooth surfaces are critical prerequisites for the epitaxial regrowth of dissimilar semiconductors. Using ZnSe/GaAs as a model system, epitaxial regrowth without a buffer layer after thermal cleaning with various As-fluxes, atomic Ga flux, and atomic hydrogen treatments to the GaAs substrates and the surfaces were investigated via in-situ Auger electron spectroscopy. The ZnSe epilayers grown on the pre-treated GaAs surfaces without a buffer layer were characterized by X-ray diffraction, photoluminescence and atomic force microscopy to evaluate the effectiveness of the surface treatment methods. It was found that a high quality ZnSe layer can be achieved by atomic hydrogen surface treatment at 300 °C without requiring GaAs buffer layer growth, which reveals a path for epitaxy growth avoiding high temperature treatments.

Original languageAmerican English
Article number149245
Number of pages8
JournalApplied Surface Science
Volume549
DOIs
StatePublished - 2021

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.

NREL Publication Number

  • NREL/JA-5K00-77585

Keywords

  • Epitaxial regrowth
  • II-VI semiconductors
  • III-V semiconductors
  • MBE

Fingerprint

Dive into the research topics of 'Investigation of GaAs Surface Treatments for ZnSe Growth by Molecular Beam Epitaxy Without a Buffer Layer'. Together they form a unique fingerprint.

Cite this