Investigation of Gallium-Boron Spin-On Codoping for Poly-Si/SiOx Passivating Contacts

Material Science

• Gallium 100%
• Doping (Additives) 100%
• Boron 100%
• Electronic Circuit 50%
• Annealing 50%
• Secondary Ion Mass Spectrometry 50%
• Surface Passivation 50%
• Electrical Resistivity 50%
• Capacitance 50%
• Mass Spectrometry 50%
• Hydrogenation 50%

Engineering

• Polysilicon 100%
• Dopants 50%
• Passivation 50%
• Solution Mixing 50%
• Increasing Temperature 25%
• Negative Effect 25%
• Co-Doping 25%
• Open Circuit Voltage 25%
• Annealing Effect 25%
• Hydrogenation 25%