Investigation of GaP/Si Heteroepitaxy on MOCVD Prepared Si(100) Surfaces

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6 Scopus Citations

Abstract

Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-terminated Si surface. The As-As dimer rows are all parallel to the step edges, and subsequent GaP growth by MOCVD retains this dimerization orientation. Both LEED and TEM indicate that the resulting epilayer is APD-free, and could thereby serve as a template for III-V/Si multijunction solar cells.

Original languageAmerican English
Number of pages4
DOIs
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015

Conference

Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans
Period14/06/1519/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5J00-63595

Keywords

  • AsH3
  • gallium phosphide
  • heteropitaxy
  • MOCVD
  • silicon

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