Investigation of GaP/Si Heteroepitaxy on MOCVD Prepared Si(100) Surfaces

Emily L. Warren; Alan E. Kibbler; Ryan M. France; Andrew G. Norman; Jerry M. Olson; William E. McMahon

doi:10.1109/PVSC.2015.7356383

Investigation of GaP/Si Heteroepitaxy on MOCVD Prepared Si(100) Surfaces

Emily L. Warren, Alan E. Kibbler, Ryan M. France, Andrew G. Norman, Jerry M. Olson, William E. McMahon

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

7 Scopus Citations

Abstract

Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-terminated Si surface. The As-As dimer rows are all parallel to the step edges, and subsequent GaP growth by MOCVD retains this dimerization orientation. Both LEED and TEM indicate that the resulting epilayer is APD-free, and could thereby serve as a template for III-V/Si multijunction solar cells.

Original language	American English
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2015.7356383 https://doi.org/10.1109/PVSC.2015.7356383
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

NREL/CP-5J00-63595

Keywords

AsH3
gallium phosphide
heteropitaxy
MOCVD
silicon

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@conference{08b46fb1382b4dbd978b83484266f948,

title = "Investigation of GaP/Si Heteroepitaxy on MOCVD Prepared Si(100) Surfaces",

abstract = "Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-terminated Si surface. The As-As dimer rows are all parallel to the step edges, and subsequent GaP growth by MOCVD retains this dimerization orientation. Both LEED and TEM indicate that the resulting epilayer is APD-free, and could thereby serve as a template for III-V/Si multijunction solar cells.",

keywords = "AsH3, gallium phosphide, heteropitaxy, MOCVD, silicon",

author = "Warren, {Emily L.} and Kibbler, {Alan E.} and France, {Ryan M.} and Norman, {Andrew G.} and Olson, {Jerry M.} and McMahon, {William E.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356383",

language = "American English",

}

TY - CONF

T1 - Investigation of GaP/Si Heteroepitaxy on MOCVD Prepared Si(100) Surfaces

AU - Warren, Emily L.

AU - Kibbler, Alan E.

AU - France, Ryan M.

AU - Norman, Andrew G.

AU - Olson, Jerry M.

AU - McMahon, William E.

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-terminated Si surface. The As-As dimer rows are all parallel to the step edges, and subsequent GaP growth by MOCVD retains this dimerization orientation. Both LEED and TEM indicate that the resulting epilayer is APD-free, and could thereby serve as a template for III-V/Si multijunction solar cells.

AB - Antiphase-domain (APD) free growth of GaP on Si has been achieved on Si surfaces prepared in situ by etching with AsH3. The pre-nucleation AsH3 etching removes O and C contaminants at a relatively low temperature, and creates a single-domain arsenic-terminated Si surface. The As-As dimer rows are all parallel to the step edges, and subsequent GaP growth by MOCVD retains this dimerization orientation. Both LEED and TEM indicate that the resulting epilayer is APD-free, and could thereby serve as a template for III-V/Si multijunction solar cells.

KW - AsH3

KW - gallium phosphide

KW - heteropitaxy

KW - MOCVD

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84961653953&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7356383

DO - 10.1109/PVSC.2015.7356383

M3 - Paper

AN - SCOPUS:84961653953

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Investigation of GaP/Si Heteroepitaxy on MOCVD Prepared Si(100) Surfaces

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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