Investigation of Hot-Carrier Relaxation in Quantum Well and Bulk GaAs at High Carrier Densities

W. S. Pelouch; R. J. Ellingson; P. E. Powers; C. L. Tang; D. M. Szmyd; A. J. Nozik

doi:10.1088/0268-1242/7/3B/086

Investigation of Hot-Carrier Relaxation in Quantum Well and Bulk GaAs at High Carrier Densities

W. S. Pelouch, R. J. Ellingson, P. E. Powers, C. L. Tang, D. M. Szmyd, A. J. Nozik

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Abstract

An investigation of the hot carrier relaxation in GaAs/(AlGa)As quantum wells and bulk GaAs in the high carrier density limit is presented. Using a time-resolved luminescence up-conversion technique with <or=80 fs temporal resolution, carrier temperatures are measured in the 100 fs to 2 ns range. The results show that hot carrier cooling in quantum wells becomes significantly slower than in the bulk for carrier densities greater than 2*10 ¹⁸ cm^-3.

Original language	American English
Article number	086
Pages (from-to)	B337-B339
Journal	Semiconductor Science and Technology
Volume	7
Issue number	3 B
DOIs	https://doi.org/10.1088/0268-1242/7/3B/086 https://doi.org/10.1088/0268-1242/7/3B/086
State	Published - 1992
Externally published	Yes

NREL Publication Number

ACNR/JA-16499

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title = "Investigation of Hot-Carrier Relaxation in Quantum Well and Bulk GaAs at High Carrier Densities",

abstract = "An investigation of the hot carrier relaxation in GaAs/(AlGa)As quantum wells and bulk GaAs in the high carrier density limit is presented. Using a time-resolved luminescence up-conversion technique with 18 cm-3.",

author = "Pelouch, {W. S.} and Ellingson, {R. J.} and Powers, {P. E.} and Tang, {C. L.} and Szmyd, {D. M.} and Nozik, {A. J.}",

year = "1992",

doi = "10.1088/0268-1242/7/3B/086",

language = "American English",

volume = "7",

pages = "B337--B339",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

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AU - Pelouch, W. S.

AU - Ellingson, R. J.

AU - Powers, P. E.

AU - Tang, C. L.

AU - Szmyd, D. M.

AU - Nozik, A. J.

PY - 1992

Y1 - 1992

N2 - An investigation of the hot carrier relaxation in GaAs/(AlGa)As quantum wells and bulk GaAs in the high carrier density limit is presented. Using a time-resolved luminescence up-conversion technique with 18 cm-3.

AB - An investigation of the hot carrier relaxation in GaAs/(AlGa)As quantum wells and bulk GaAs in the high carrier density limit is presented. Using a time-resolved luminescence up-conversion technique with 18 cm-3.

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U2 - 10.1088/0268-1242/7/3B/086

DO - 10.1088/0268-1242/7/3B/086

M3 - Article

AN - SCOPUS:0026834924

SN - 0268-1242

VL - 7

SP - B337-B339

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3 B

M1 - 086

ER -

Investigation of Hot-Carrier Relaxation in Quantum Well and Bulk GaAs at High Carrier Densities

Abstract

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