Investigation of Junction Properties in CdS/CdTe Solar Cells and Their Correlation to Device Properties: Preprint

    Research output: Contribution to conferencePaper


    Secondary-ion mass spectrometry analysis of the CdS/CdTe interface shows that S diffusion in CdTe increases with substrate temperature and CdCl2 heat treatment. There is also an accumulation of Cl at the interface for CdCl2-treated samples. Modulated photo-reflectance studies shows that devices with CdCl2 heat treatment and open-circuit voltage (Voc) of 835 mV have a distinct high electric-fieldregion in the layer with bandgap of 1.45 eV. Electron-beam induced current measurements reveal a one-sided junction for high Voc devices. The nature of the junction changes with processing. For heterojunction devices, the depletion region includes the highly defective CdS/CdTe interface, which would increase the recombination current and consequently the dark current, leading to lower Voc. Inthe case of CdCl2-treated cells, the n+-p junction and its high electric-field results in the junction between structurally compatible CdTe and the Te-rich CdSTe alloy, and thus, in higher Voc.
    Original languageAmerican English
    Number of pages8
    StatePublished - 2008
    Event33rd IEEE Photovoltaic Specialists Conference - San Diego, California
    Duration: 11 May 200816 May 2008


    Conference33rd IEEE Photovoltaic Specialists Conference
    CitySan Diego, California

    NREL Publication Number

    • NREL/CP-520-42567


    • CdS/CdTe
    • electric-field region
    • electron-beams
    • junctions
    • photoreflectance
    • secondary ion mass spectrometry (SIMS)


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