Investigation of Light-Induced Defect Creation in a-Si:H Using Junction Capacitance Methods

Investigation of Light-Induced Defect Creation in a-Si:H Using Junction Capacitance Methods

Research output: Contribution to conference › Paper

Original language	American English
Pages	193-201
Number of pages	9
State	Published - 1987
Event	1987 Amorphous Silicon Subcontractors' Review Meeting - Palo Alto, California Duration: 26 Jan 1987 → 27 Jan 1987

Conference

Conference	1987 Amorphous Silicon Subcontractors' Review Meeting
City	Palo Alto, California
Period	26/01/87 → 27/01/87

Bibliographical note

Work performed by University of Oregon, Eugene, Oregon

NREL Publication Number

ACNR/CP-8749

Cite this

@conference{17fc0bdf02354106bd0d7edd398acb1a,

title = "Investigation of Light-Induced Defect Creation in a-Si:H Using Junction Capacitance Methods",

author = "NREL",

note = "Work performed by University of Oregon, Eugene, Oregon; 1987 Amorphous Silicon Subcontractors' Review Meeting ; Conference date: 26-01-1987 Through 27-01-1987",

year = "1987",

language = "American English",

pages = "193--201",

}