Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

Allison Mis; Ann Greenaway; Celeste Melamed; Adele Tamboli; Geoff Brennecka

doi:10.1017/S1431927620017997

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

Allison Mis, Ann Greenaway, Celeste Melamed, Adele Tamboli, Geoff Brennecka

Materials Science

Colorado School of Mines

Research output: Contribution to journal › Article › peer-review

Abstract

Similarly to how III-Vs opened a new frontier for semiconductors, ternary nitrides are a promising family of semiconducting materials with a vast range of physical and optoelectronic properties. Ternary nitrides offer multiple avenues of band gap and lattice tunability, including cation ordering and off-stoichiometry.

Original language	American English
Article number	549
Pages (from-to)	1406-1407
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	26
Issue number	S2
DOIs	https://doi.org/10.1017/S1431927620017997 https://doi.org/10.1017/S1431927620017997
State	Published - 2020

NREL Publication Number

NREL/JA-5K00-78121

Keywords

optoelectronics
semiconductors
ternary nitrides

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AU - Brennecka, Geoff

PY - 2020

Y1 - 2020

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AB - Similarly to how III-Vs opened a new frontier for semiconductors, ternary nitrides are a promising family of semiconducting materials with a vast range of physical and optoelectronic properties. Ternary nitrides offer multiple avenues of band gap and lattice tunability, including cation ordering and off-stoichiometry.

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Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

Abstract

NREL Publication Number

Keywords

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