Abstract
Reducing poly-Si thickness to minimize parasitic absorption on a light-receiving side of a TOPCon solar cell without suffering voltage losses after metallization is a challenge in optimizing TOPCon performance. As an alternative to fire-through pastes, we investigate low-temperature Ag paste to SiO2/poly-Si passivating contacts through fabrication of electrical test structures to characterize the passivation quality and electrical transport across the metallized interface. With current paste chemistries, we find that solvent wetting of the poly-Si surface before evaporation and non-volatile binder resin adhesion to the surface after curing are major impediments which prevent Ag contact formation. However, low-resistance poly-Si/Ag interfaces formed with physical vapour deposition similarly degrade after annealing, indicating contacting issues related to the Ag content even in the absence of the organic paste components.
Original language | American English |
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Number of pages | 6 |
DOIs | |
State | Published - 24 Aug 2022 |
Event | 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021 - Hamelin, Virtual, Germany Duration: 19 Apr 2021 → 23 Apr 2021 |
Conference
Conference | 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021 |
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Country/Territory | Germany |
City | Hamelin, Virtual |
Period | 19/04/21 → 23/04/21 |
Bibliographical note
Publisher Copyright:© 2022 American Institute of Physics Inc.. All rights reserved.
NREL Publication Number
- NREL/CP-5900-79981
Keywords
- low temperature Ag paste
- passivating contact
- passivation degradation
- photovoltaic
- PV
- TOPCon