Investigation of the L6-X6 Intervalley Scattering in AlxGa1-xAs by Measuring Hot Carrier Dynamics in a K ...does not equal... 0 Satellite Valley

W. B. Wang, Kai Shum, R. R. Alfano, D. Szmyd, A. J. Nozik

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Abstract

The time evolution of the electron population in the bottom of the X 6 valley in Al0.6Ga0.4As was obtained by a femtosecond visible-pump and infrared (IR)-probe absorption spectroscopy. The L6 to X6 intervalley scattering time of approximately 200 fs was determined from the measured kinetic data. The role of the L6 to X6 intervalley scattering for the relaxation process of hot carriers was revealed.

Original languageAmerican English
Article number042
Pages (from-to)B173-B175
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - 1992
Externally publishedYes

NREL Publication Number

  • ACNR/JA-16500

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