Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices: Preprint

Research output: Contribution to conferencePaper

Abstract

This conference paper describes the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also showsub-interfaces about 0.2 ..mu..m below the surface. The In-rich samples were almost void of these sub-interfaces.
Original languageAmerican English
Number of pages6
StatePublished - 2002
Event29th IEEE PV Specialists Conference - New Orleans, Louisiana
Duration: 20 May 200224 May 2002

Conference

Conference29th IEEE PV Specialists Conference
CityNew Orleans, Louisiana
Period20/05/0224/05/02

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana

NREL Publication Number

  • NREL/CP-520-31430

Keywords

  • CIGS absorbers
  • energy-dispersive x-ray spectroscopy
  • high-efficiency devices
  • PV
  • scanning electron microscopy (SEM)
  • selected-area electron diffraction (SAD)
  • short circuit current (ISC)
  • three-stage process
  • transmission electron microscopy (TEM)

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