Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices: Preprint

Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices: Preprint

Research output: Contribution to conference › Paper

Abstract

This conference paper describes the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also showsub-interfaces about 0.2 ..mu..m below the surface. The In-rich samples were almost void of these sub-interfaces.

Original language	American English
Number of pages	6
State	Published - 2002
Event	29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002

Conference

Conference	29th IEEE PV Specialists Conference
City	New Orleans, Louisiana
Period	20/05/02 → 24/05/02

Bibliographical note

Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana

NREL Publication Number

NREL/CP-520-31430

Keywords

CIGS absorbers
energy-dispersive x-ray spectroscopy
high-efficiency devices
PV
scanning electron microscopy (SEM)
selected-area electron diffraction (SAD)
short circuit current (ISC)
three-stage process
transmission electron microscopy (TEM)

Access to Document

https://www.nrel.gov/docs/fy02osti/31430.pdf

Cite this

@conference{121a86bfe5834a0bb9411858a0a8e0f4,

title = "Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices: Preprint",

abstract = "This conference paper describes the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also showsub-interfaces about 0.2 ..mu..m below the surface. The In-rich samples were almost void of these sub-interfaces.",

keywords = "CIGS absorbers, energy-dispersive x-ray spectroscopy, high-efficiency devices, PV, scanning electron microscopy (SEM), selected-area electron diffraction (SAD), short circuit current (ISC), three-stage process, transmission electron microscopy (TEM)",

author = "NREL",

note = "Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana; 29th IEEE PV Specialists Conference ; Conference date: 20-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

}

TY - CONF

T1 - Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices: Preprint

AU - NREL, null

N1 - Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, Louisiana

PY - 2002

Y1 - 2002

N2 - This conference paper describes the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also showsub-interfaces about 0.2 ..mu..m below the surface. The In-rich samples were almost void of these sub-interfaces.

AB - This conference paper describes the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also showsub-interfaces about 0.2 ..mu..m below the surface. The In-rich samples were almost void of these sub-interfaces.

KW - CIGS absorbers

KW - energy-dispersive x-ray spectroscopy

KW - high-efficiency devices

KW - PV

KW - scanning electron microscopy (SEM)

KW - selected-area electron diffraction (SAD)

KW - short circuit current (ISC)

KW - three-stage process

KW - transmission electron microscopy (TEM)

M3 - Paper

T2 - 29th IEEE PV Specialists Conference

Y2 - 20 May 2002 through 24 May 2002

ER -

Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices: Preprint

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this