Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices

Romme Noufi; Yanfa Yan; Jehad Abu-Shama; Kim Jones; Mowafak Al-Jassim; Brian Keyes; Jeff Alleman; Kannan Ramanathan

Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices

Romme Noufi, Yanfa Yan, Jehad Abu-Shama, Kim Jones, Mowafak Al-Jassim, Brian Keyes, Jeff Alleman, Kannan Ramanathan

Research output: Contribution to conference › Paper › peer-review

10 Scopus Citations

Abstract

We examined the microstructure of Cu(In,Ga)Se₂ (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the Cu_xSe secondary phase. These samples also show sub-interfaces about 0.2 μm below the surface. The In-rich samples were almost void of these sub-interfaces.

Original language	American English
Pages	508-510
Number of pages	3
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-31430

NREL Publication Number

NREL/CP-520-33695

Cite this

@conference{e338c34e71b14b6a8b04bcee94674c6e,

title = "Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices",

abstract = "We examined the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also show sub-interfaces about 0.2 μm below the surface. The In-rich samples were almost void of these sub-interfaces.",

author = "Romme Noufi and Yanfa Yan and Jehad Abu-Shama and Kim Jones and Mowafak Al-Jassim and Brian Keyes and Jeff Alleman and Kannan Ramanathan",

note = "For preprint version including full text online document, see NREL/CP-520-31430; 29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "508--510",

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TY - CONF

T1 - Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices

AU - Noufi, Romme

AU - Yan, Yanfa

AU - Abu-Shama, Jehad

AU - Jones, Kim

AU - Al-Jassim, Mowafak

AU - Keyes, Brian

AU - Alleman, Jeff

AU - Ramanathan, Kannan

N1 - For preprint version including full text online document, see NREL/CP-520-31430

PY - 2002

Y1 - 2002

N2 - We examined the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also show sub-interfaces about 0.2 μm below the surface. The In-rich samples were almost void of these sub-interfaces.

AB - We examined the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also show sub-interfaces about 0.2 μm below the surface. The In-rich samples were almost void of these sub-interfaces.

UR - http://www.scopus.com/inward/record.url?scp=0036956748&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0036956748

SP - 508

EP - 510

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Investigation of the Microstructure of Cu(In,Ga)Se2 Thin Films Used in High-Efficiency Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this