Abstract
We examined the microstructure of Cu(In,Ga)Se2 (CIGS) films, as it transitioned from Cu-rich to In-rich composition, by transmission electron microscopy, and energy-dispersive X-ray spectroscopy. We find that the Cu-rich samples have larger grains than the In-rich samples, and they contain two structurally different forms of the CuxSe secondary phase. These samples also show sub-interfaces about 0.2 μm below the surface. The In-rich samples were almost void of these sub-interfaces.
| Original language | American English |
|---|---|
| Pages | 508-510 |
| Number of pages | 3 |
| State | Published - 2002 |
| Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002 |
Conference
| Conference | 29th IEEE Photovoltaic Specialists Conference |
|---|---|
| Country/Territory | United States |
| City | New Orleans, LA |
| Period | 19/05/02 → 24/05/02 |
Bibliographical note
For preprint version including full text online document, see NREL/CP-520-31430NREL Publication Number
- NREL/CP-520-33695