Abstract
ZnO thin films with significantly reduced bandgaps were synthesized by doping N and co-doping Al and N at 100°C. All the films were synthesized by radio-frequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that co-doped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity as compared to ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited improved photocurrents than ZnO:N films grown with pure N doping.
Original language | American English |
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Pages | 237-242 |
Number of pages | 6 |
DOIs | |
State | Published - 2012 |
Event | Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011 - Columbus, OH, United States Duration: 16 Oct 2011 → 20 Oct 2011 |
Conference
Conference | Advances and Applications in Electroceramics II - Materials Science and Technology 2011 Conference and Exhibition, MS and T 2011 |
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Country/Territory | United States |
City | Columbus, OH |
Period | 16/10/11 → 20/10/11 |
NREL Publication Number
- NREL/CP-5200-57690