Investigations of the Structure of the Iron Oxide Semiconductor-Electrolyte Interface

Vladimir M. Aroutiounian; Valeri M. Arakelyan; Gohar E. Shahnazaryan; Gnel M. Stepanyan; Emma A. Khachaturyan; John A. Turner

doi:10.1016/j.crci.2005.03.029

Investigations of the Structure of the Iron Oxide Semiconductor-Electrolyte Interface

Vladimir M. Aroutiounian, Valeri M. Arakelyan, Gohar E. Shahnazaryan, Gnel M. Stepanyan, Emma A. Khachaturyan, John A. Turner

Chemistry and Nanoscience

Yerevan State University

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

The ceramic semiconductor photoelectrodes made of Fe_1.99 Sn_0.01O₃, Fe_1.99Nb_0.01 O₃, Fe_1.8Nb_0.2O₃ and FeNbO₄ are synthesized. The spectral and current-voltage characteristics of photoelectrodes are measured. The anodic photocurrent onset potential is determined. The threshold photon energies corresponding to the inter-band optical transitions near the edge of the fundamental absorption of the semiconductor photoelectrode are calculated. The analysis of the frequency dispersion of the real and imaginary parts of the complex impedance of photoelectrochemical cell with manufactured electrodes is carried out. On the basis of this analysis, equivalent circuits describing the structure of the double electrical layer on the semiconductor-electrolyte interface are proposed, their parameters are calculated. Main limiting steps of the electrode process are determined.

Original language	American English
Pages (from-to)	325-331
Number of pages	7
Journal	Comptes Rendus Chimie
Volume	9
Issue number	2
DOIs	https://doi.org/10.1016/j.crci.2005.03.029 https://doi.org/10.1016/j.crci.2005.03.029
State	Published - 2006

NREL Publication Number

NREL/JA-560-39675

Keywords

Ceramic photoelectrode
Equivalent circuits
Impedance
Interface
Iron oxide

Access to Document

Cite this

@article{db719ba71a1544aa99d72b961e83a9bb,

title = "Investigations of the Structure of the Iron Oxide Semiconductor-Electrolyte Interface",

abstract = "The ceramic semiconductor photoelectrodes made of Fe1.99 Sn0.01O3, Fe1.99Nb0.01 O3, Fe1.8Nb0.2O3 and FeNbO4 are synthesized. The spectral and current-voltage characteristics of photoelectrodes are measured. The anodic photocurrent onset potential is determined. The threshold photon energies corresponding to the inter-band optical transitions near the edge of the fundamental absorption of the semiconductor photoelectrode are calculated. The analysis of the frequency dispersion of the real and imaginary parts of the complex impedance of photoelectrochemical cell with manufactured electrodes is carried out. On the basis of this analysis, equivalent circuits describing the structure of the double electrical layer on the semiconductor-electrolyte interface are proposed, their parameters are calculated. Main limiting steps of the electrode process are determined.",

keywords = "Ceramic photoelectrode, Equivalent circuits, Impedance, Interface, Iron oxide",

author = "Aroutiounian, {Vladimir M.} and Arakelyan, {Valeri M.} and Shahnazaryan, {Gohar E.} and Stepanyan, {Gnel M.} and Khachaturyan, {Emma A.} and Turner, {John A.}",

year = "2006",

doi = "10.1016/j.crci.2005.03.029",

language = "American English",

volume = "9",

pages = "325--331",

journal = "Comptes Rendus Chimie",

issn = "1631-0748",

publisher = "Academie des sciences",

number = "2",

}

TY - JOUR

T1 - Investigations of the Structure of the Iron Oxide Semiconductor-Electrolyte Interface

AU - Aroutiounian, Vladimir M.

AU - Arakelyan, Valeri M.

AU - Shahnazaryan, Gohar E.

AU - Stepanyan, Gnel M.

AU - Khachaturyan, Emma A.

AU - Turner, John A.

PY - 2006

Y1 - 2006

N2 - The ceramic semiconductor photoelectrodes made of Fe1.99 Sn0.01O3, Fe1.99Nb0.01 O3, Fe1.8Nb0.2O3 and FeNbO4 are synthesized. The spectral and current-voltage characteristics of photoelectrodes are measured. The anodic photocurrent onset potential is determined. The threshold photon energies corresponding to the inter-band optical transitions near the edge of the fundamental absorption of the semiconductor photoelectrode are calculated. The analysis of the frequency dispersion of the real and imaginary parts of the complex impedance of photoelectrochemical cell with manufactured electrodes is carried out. On the basis of this analysis, equivalent circuits describing the structure of the double electrical layer on the semiconductor-electrolyte interface are proposed, their parameters are calculated. Main limiting steps of the electrode process are determined.

AB - The ceramic semiconductor photoelectrodes made of Fe1.99 Sn0.01O3, Fe1.99Nb0.01 O3, Fe1.8Nb0.2O3 and FeNbO4 are synthesized. The spectral and current-voltage characteristics of photoelectrodes are measured. The anodic photocurrent onset potential is determined. The threshold photon energies corresponding to the inter-band optical transitions near the edge of the fundamental absorption of the semiconductor photoelectrode are calculated. The analysis of the frequency dispersion of the real and imaginary parts of the complex impedance of photoelectrochemical cell with manufactured electrodes is carried out. On the basis of this analysis, equivalent circuits describing the structure of the double electrical layer on the semiconductor-electrolyte interface are proposed, their parameters are calculated. Main limiting steps of the electrode process are determined.

KW - Ceramic photoelectrode

KW - Equivalent circuits

KW - Impedance

KW - Interface

KW - Iron oxide

UR - http://www.scopus.com/inward/record.url?scp=30944458810&partnerID=8YFLogxK

U2 - 10.1016/j.crci.2005.03.029

DO - 10.1016/j.crci.2005.03.029

M3 - Article

AN - SCOPUS:30944458810

SN - 1631-0748

VL - 9

SP - 325

EP - 331

JO - Comptes Rendus Chimie

JF - Comptes Rendus Chimie

IS - 2

ER -

Investigations of the Structure of the Iron Oxide Semiconductor-Electrolyte Interface

Abstract

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this