Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

Teresa Barnes, Katherine Zaunbrecher, O. Ogedengbe, C. Swartz, P. Jayathilaka, J. Petersen, S. Sohal, E. LeBlanc, M. Edirisooriya, A. Wang, T. Myers

Research output: Contribution to journalArticlepeer-review

4 Scopus Citations


Iodine-doped CdTe and Cd1−xMgxTe layers were grown by molecular beam epitaxy. Secondary ion mass spectrometry characterization was used to measure dopant concentration, while Hall measurement was used for determining carrier concentration. Photoluminescence intensity and time-resolved photoluminescence techniques were used for optical characterization. Maximum n-type carrier concentrations of 7.4 × 1018 cm−3 for CdTe and 3 × 1017 cm−3 for Cd0.65Mg0.35Te were achieved. Studies suggest that electrically active doping with iodine is limited with dopant concentration much above these values. Dopant activation of about 80% was observed in most of the CdTe samples. The estimated activation energy is about 6 meV for CdTe and the value for Cd0.65Mg0.35Te is about 58 meV. Iodine-doped samples exhibit long lifetimes with no evidence of photoluminescence degradation with doping as high as 2 × 1018 cm−3, while indium shows substantial non-radiative recombination at carrier concentrations above 5 × 1016 cm−3. Iodine was shown to be thermally stable in CdTe at temperatures up to 600°C. Results suggest iodine may be a preferred n-type dopant compared to indium in achieving heavily doped n-type CdTe.

Original languageAmerican English
Pages (from-to)5424-5429
Number of pages6
JournalJournal of Electronic Materials
Issue number9
StatePublished - 1 Sep 2017

Bibliographical note

Publisher Copyright:
© 2017, The Minerals, Metals & Materials Society.

NREL Publication Number

  • NREL/JA-5K00-68892


  • CdMgTe
  • CdTe
  • doping
  • iodine
  • MBE
  • solar cell


Dive into the research topics of 'Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications'. Together they form a unique fingerprint.

Cite this