Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

David Young, William Nemeth, Vincenzo LaSalvia, Robert Reedy Jr., Pauls Stradins, Nicholas Bateman

Research output: Contribution to conferencePaperpeer-review

6 Scopus Citations


We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 °C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ∼ 14 fA/cm2 for Si:P, and Jo ∼ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

Original languageAmerican English
Number of pages5
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5J00-63611


  • Contacts
  • ion implantation
  • photovoltaic cells
  • silicon


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