IR-Induced Quenching and Enhancement of Photoconductivity and Photoluminescence

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	American English
Title of host publication	Semiconductors and Semimetals; Volume 21: Hydrogenated Amorphous Silicon; Part B: Optical Properties
Editors	J. I. Pankove
Pages	Chapter 10, 329-357
State	Published - 1984

Work performed by Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, New York

NLR Publication Number

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title = "IR-Induced Quenching and Enhancement of Photoconductivity and Photoluminescence",

author = "NREL",

note = "Work performed by Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, New York",

year = "1984",

language = "American English",

pages = "Chapter 10, 329--357",

editor = "Pankove, \{J. I.\}",

booktitle = "Semiconductors and Semimetals; Volume 21: Hydrogenated Amorphous Silicon; Part B: Optical Properties",

}

TY - CHAP

T1 - IR-Induced Quenching and Enhancement of Photoconductivity and Photoluminescence

AU - NREL, null

N1 - Work performed by Metallurgy and Materials Science Division, Brookhaven National Laboratory, Upton, New York

PY - 1984

Y1 - 1984

M3 - Chapter

SP - Chapter 10, 329-357

BT - Semiconductors and Semimetals; Volume 21: Hydrogenated Amorphous Silicon; Part B: Optical Properties

A2 - Pankove, J. I.

ER -