Abstract
Irreversible light-induced degradation has been observed in amorphous silicon p-i-n solar cells exposed to intense illumination at normal operating temperatures. In addition, subjecting the cells to a strong reverse bias while exposed to intense illumination caused increases in both the open-circuit voltage and the fill factor. Both effects appear to be associated with the motion of hydrogen inthe vicinity of the p/i interface.
| Original language | American English |
|---|---|
| Pages | 595-598 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 1997 |
| Event | Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
| Conference | Twenty Sixth IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Anaheim, California |
| Period | 29/09/97 → 3/10/97 |
Bibliographical note
Work performed by Solarex Corporation, Newtown, PennsylvaniaNREL Publication Number
- NREL/CP-520-24981